As an alternative solution to carbon thermal cracking sources, CBr4 sources do not require the use of carrier gas. They can achieve deep-level carbon doping in materials such as gallium arsenide and aluminum gallium arsenic through direct evaporation, which is very suitable for material systems with high doping accuracy and high repeatability. 64 gas flow rates can be achieved to meet the needs of different processes. The gas control panel and its accessories are integrated in the special gas cabinet and can be placed near the MBE system. The CBr4 gas tank is heated by a water bath, and the entire gas pipeline is heated by a heating belt to prevent condensation caused by the temperature drop in the pipeline. The introducer is also heated by a spring heating coil. Due to the small amount of gas used in the process, no additional pump group is required on the MBE chamber, but the waste gas generated is discharged from the acid outlet through the corrosion-resistant gas pump body.
● High doping accuracy and good repeatability; can cover deep and shallow doping energy levels | ● Beam size can be precisely adjusted; safe, reliable, and easy to operate |
Applicable system | All R&D and production MBE systems | |
Applicable gas source | CBr4 | |
Minimum mounting flange size | CF35 | |
Length in vacuum (mm) | 318-517 | |
Vacuum inner and outer diameter (mm) | 25 | |
Common operating temperature | 30-200℃ | |
Maximum degassing temperature | 54 | |
order code | 3205010172 |
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