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SH-Ta Series Heater

The ultra-high vacuum compatible SH-Ta series heater uses specially wound high-purity tantalum wire for radiation heating. It can be installed vertically in the molecular beam epitaxy system and is very suitable for growing various compound semiconductor materials. The sample stage allows the loading of 4, 6, and 8-inch substrate trays, and different models of SH-Ta series heaters can be selected according to the MBE system. The heating zone uses high-purity tantalum, molybdenum and PBN materials to minimize material outgassing and particle generation under high temperature conditions. The substrate rotation adopts a unique high-temperature resistant magnetic coupling rotation drive structure. The magnet does not need to be removed during the baking process, which can ensure that the substrate rotates continuously for a long time at the growth temperature without maintenance. The specially designed heating wire distribution can achieve uniform heating of the substrate surface.


Features


Spiral tantalum wire radiation heating●  The maximum operating temperature can reach 1000℃The substrate can be rotated continuously (0-60RPM)
The temperature uniformity of the whole chip is better than ±3℃●  Applicable to Different sizes of substrates
Technical Parameters

Heater modelSH800-TaSH800P-TaSH1000-TaSH2000-Ta
gas loadMBE800MBE800PSH1000 SH2000
Heating plate size (mm)170206284462
Pallet size(mm)126185270400
Mounting flangeCF250CF250CF350WS600
Number of heating wires12

Heating wire material
spiral tantalum wire
Heating methodRadiant heating
ThermocoupleType C / W-Re 5%-26% (Type K optional)
Common rotation speeds0-40 RPM, maximum speed 60RPM
Common operating temperature800℃
Maximum degassing temperature1000℃
temperature stability≤±0.2℃
temperature uniformity≤±3℃
Baking temperature250℃
order code3205010037320501018432050101493205010185

For information on compatibility of RFPS plasma sources with Riber or Veeco MBE systems, please contact Fermian Instruments


Test Data

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