Fermion Frontier | The influence of different oxygen precursors on epitaxial β-Ga₂O₃ thin films by MBE
As a representative material among ultra-wide bandgap (UWBG) semiconductor materials, β-Ga2O3 is a natural intrinsic absorption material for preparing solar-blind detectors due to its availability of large-area single wafers, high transparency to visible light, and excellent stability. However, the molecular beam epitaxial growth mechanism of β-Ga2O3 is still unclear, especially the effect of oxygen precursors on the growth mechanism of β-Ga2O3 has not been disclosed, which is important for the
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