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Oxide-MBE-350 molecular beam epitaxy system

Oxide MBE 350 mainly uses a cylindrical 316 stainless steel cavity processed by argon arc welding, with a top flange size of DN300CF. The MBE350 system can install up to 9 evaporation sources and reserve multiple flange ports, which can be combined with RHEED for real-time monitoring of film growth. The system can introduce oxidizing gases to epitaxially grow metal oxide thin films.


Product Features
● Differential design of evaporation source, allowing deposition of oxide materials under high oxygen or ozone partial pressure● No need to destroy the vacuum in the growth chamber, to achieve packing and replacement of the evaporation source● High purity ozone generation system or radio frequency plasma source can be selected as the oxygen source


Technical Parameter
Oxide-MBE-350Module DescriptionConfiguration parameter
Growth chamberCavityMaterial of the cavitySS316
Cavity Size200mm I.D
Baking temperatureMax.200℃
Background vacuum< 5×10-10 mbar
Pumping system450L/s molecular pump + 10m3/h mechanical pump
Vacuum measurement systemIonic gauge+Pirani gauge
Liquid nitrogen cold screenOptional
Ion pumpOptional
Sample HolderSample sizeFlag-type Sample holder
Substrate heating methodRadiant heating
Substrate heater temperatureRoom temperature-1200K
ComponentSteam source configuration6xDN40CF, 2xDN63CF
Independent evaporation source bafflePneumatic drive
QCMStandard configuration
RHEED15KeV-30KeV
Ion SourceOptional
Ozone generation module Optional
RF plasma sourceOptional

Rapid injection room
CavityMaterial of the cavitySS316
Baking temperatureMax.200℃
Background vacuum<5×10-8 mbar
Pumping system80L/s Molecular pump+10m3/h Mechanical pump
Vacuum measurement systemFull range gauge
ComponentSample Parking Platform6 or 12 workstations
System integration and controlGUIDE softwareStandard configuration
Baking systemStandard configuration
System bracketStandard configuration
Vacuum lighting systemOptional
Plasma cleaningPump truck
CCD cameraOptional


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