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High-efficiency RF plasma pyrolysis source

The high-efficiency RF plasma cracking source of Fe-Mian Instruments adopts original RF focusing excitation technology and 4 high-efficiency solid-state RF sources as driving power sources (13.56MHz/433MHz/915MHz/2450MHz). It does not require a complex RF matching network and can effectively improve the ionization efficiency of the gas. A small hole structure is set at the plasma outlet, and the stability and uniformity of the extracted atoms/ions are optimized by adjusting the small hole structure. Compared with the traditional RF plasma source, this cracking source can better control the beam instability caused by switching valves and switching RF. At the same time, this cracking source can produce different plasma sources such as nitrogen source, oxygen source and hydrogen source through the cracking of discharge cavities of different materials. It is widely used in nitride growth, nitrogen atom implantation and doping, oxide growth, oxygen atom implantation and doping, and hydrogen atom surface cleaning in molecular beam epitaxy systems (MBE).

Specifications
● Original RF focusing technology: High gas ionization efficiency, high plasma source stability● 4 types of solid-state RF drive: Simple structure, no complex external matching network, easy to operate● Applicable to N:N2, O2, H2, CH4, Ar, Kr and other working gases
● Compact ultra-high vacuum design, suitable for various installation ports such as CF35/CF63/CF100● Three main application directions: Atomic source for MBE thin film growth, ion source for surface modification, plasma source for vacuum cleaning
Product size
Ion source 433Ion source 915


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