MBE-1000 cluster molecular beam epitaxy system

Fermion Instrument has launched the MBE-1000 Cluster molecular beam epitaxy system, which can perform 5 × 3''，4×4'', Single piece 6''. Single piece 8'' Substrate epitaxial growth. This system can achieve fully automatic sample transfer and growth, making it very suitable for mass production of devices. The growth chamber adopts dual temperature zone substrate heating to achieve uniform and controllable growth temperature. The MBE-1000 system can be customized with 10 evaporation source ports or 12 evaporation source ports.

The MBE-1000 Cluster fully automatic sample transfer system integrates different chambers on a circular sample transfer chamber, and uses a 360 ° continuously rotating heavy-duty robotic arm component to transfer 10 inch substrate trays between the injection chamber, pre-processing chamber, growth chamber, and storage chamber.

According to customer requirements, Fermion Instrument provides different models of thermal evaporation sources, cracking sources, electron beam evaporation sources, and gas sources. The system can install RHEED, BFM, RGA, etc. to achieve in-situ monitoring of film growth. The system can be paired with the MBE beam monitoring spectroscopy system of Fermion Instrument to achieve fully automated growth with repeatability and batch capability. Fermion Instrument provides MBE operation software, including three major functions: growth process program writing, automatic growth control, and uninterrupted data recording. It can execute growth process program to control baffle movement, source furnace temperature, substrate temperature, substrate rotation speed and direction. The control software includes process requirements such as temperature curve, vacuum pressure curve, power output curve, and sample transfer between various systems.